a p02n90h/j-hf advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 900v low on-resistance r ds(on) 7.2 fast switching characteristics i d 1.9a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w w/ p d @t a =25 total power dissipation 4 w e as single pulse avalanche energy 2 mj i ar avalanche current a t stg t j operating junction temperature range thermal data symbol value units rthj-c maximum thermal resistance, junction-case 2 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data & specifications subject to change without notice 18 1.9 1.2 + 30 parameter rating 900 halogen-free product 1 storage temperature range -55 to 150 6 62.5 linear derating factor 0.5 maximum thermal resistance, junction-ambient (pcb mount) 4 201008115 2 -55 to 150 parameter 1.9 g d s to-251(j) g d s to-252(h) a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-252 package is widely preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the through-hole version (ap02n90j) is available for low-profile applications. g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 900 - - v bv dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.8 - v/ r ds(on) static drain-source on-resistance v gs =10v, i d =0.85a - - 7.2 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =1.9a - 2 - s i dss drain-source leakage current v ds =900v, v gs =0v - - 10 ua drain-source leakage current (t j =125 o c) v ds =720v , v gs =0v - - 100 ua i gss gate-source leakage v gs =+ 30v, v ds =0v - - + 100 na q g total gate charge 3 i d =1.9a - 12 20 nc q gs gate-source charge v ds =540v - 2.5 - nc q gd gate-drain ("miller") charge v gs =10v - 4.7 - nc t d(on) turn-on delay time 3 v dd =450v - 10 - ns t r rise time i d =1.9a - 5 - ns t d(off) turn-off delay time r g =10 ,v gs =10v - 18 - ns t f fall time r d =236 -9- ns c iss input capacitance v gs =0v - 630 1000 pf c oss output capacitance v ds =25v - 40 - pf c rss reverse transfer capacitance f=1.0mhz - 4 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 3 i s =1.9a, v gs =0v - - 1.3 v t rr reverse recovery time 3 i s =1.9a, v gs =0v, - 360 - ns q rr reverse recovery charge di/dt=100a/s - 1.8 - c notes: 1.pulse width limited by max. junction temperature. 2.starting t j =25 o c , v dd =50v , l=10mh , r g =25 , i as =1.9a. 3.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. ap02n90h/j-hf 4.surface mounted on 1 in 2 copper pad of fr4 board 2
ap02n90h/j-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0.0 0.4 0.8 1.2 1.6 2.0 0369121518 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c v g =4.5v 10v 8.0v 6.0v 5.0v 0.00 0.25 0.50 0.75 1.00 1.25 0369121518 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 8.0v 6.0v 5.0v v g =4.5v 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d = 0.85 a v g =10v 0.0 0.5 1.0 1.5 2.0 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th) (v) 0.8 0.9 1.0 1.1 1.2 -50 0 50 100 150 junction temperature ( o c) normalized bv dss (v)
ap02n90h/j-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0 2 4 6 8 10 12 0481216 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds = 180 v v ds = 360 v v ds = 540 v i d = 1.9 a 1 10 100 1000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty=0. single 0.01 0.10 1.00 10.00 1 10 100 1000 10000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc operation in this area limited by r ds(on)
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